Piezoresistance effect under conditions of dynamics deformation of many-valley semiconductorsCHEKURIN, V. F; TYBULOWICZ, A.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 448-449, issn 0038-5700Article

Effet photomagnétoélectrique intervallée dans le siliciumGRIGOR'EV, N. N; ZYKOV, V. G; SERDEGA, B. K et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1764-1768, issn 0015-3222Article

Chaotic current noise in a two-valley semiconductor system of the Gunn instabilityNAKAMURA, K.Physics letters. A. 1988, Vol 134, Num 3, pp 173-178, issn 0375-9601Article

The kinetic distribution function in multi-valley semiconductors evolving at the momentum relaxation scaleCHENG, M.-C.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 6, pp 1038-1048, issn 0022-3727Article

Strained silicon for quantum computingKEYES, Robert W.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 5, pp L7-L10, issn 0022-3727Article

Probabilité des transitions Γ→L entre vallées dans les cristaux d'arséniure de galliumKARLIK, I. YA; MIRLIN, D. N; SAPEGA, V. F et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 6, pp 1030-1032, issn 0015-3222Article

High-field electron transport for ellipsoidal multivalley band structure of siliconSAMUDRA, G; SOO JIN CHUA; GHATAK, A. K et al.Journal of applied physics. 1992, Vol 72, Num 10, pp 4700-4704, issn 0021-8979Article

Intervalley scattering and shallow-deep instabilities of electronic levels in semiconductorsRESCA, L; LOHRMANN, D. J; GRAFT, R. D et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 5, pp 2741-2746, issn 0163-1829Article

Influence des mouvements des populations d'électrons entre les vallées sur l'effet photomagnétoélectrique dans le siliciumSERDEGA, B. K; SHEKHOVTSOV, L. V.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 6, pp 1044-1046, issn 0015-3222Article

Effect of intervalley scattering of carriers on the longitudinal magnetoconductance in many-valley materialsKOZLOV, V. A; KORSHAK, A. N; MATHON, D et al.Soviet physics. Solid state. 1992, Vol 34, Num 3, pp 503-506, issn 0038-5654Article

Hot-electron transport for many-valley semiconductors by the method of nonequilibrium statistical operatorsLIU, M; XING, D. Y; TING, C. S et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 6, pp 2997-3007, issn 0163-1829Article

Spectres des donneurs peu profonds dans les semiconducteurs multivalléesBEJNIKHES, I. L; KOGAN, SH. M.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 44, Num 1, pp 39-42, issn 0370-274XArticle

Anisotropie de striction de la conductivité électrique des semiconducteurs cubiques à plusieurs vallées ayant une constante diélectrique élevéeKOCHELAP, V. A.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 12, pp 2190-2196, issn 0015-3222Article

Elastic scattering in many-valley semiconductors and its role in the relaxation of the energy of nonequilibrium electronsPRIMA, N. A.Soviet physics. Semiconductors. 1992, Vol 26, Num 3, pp 299-301, issn 0038-5700Article

Tension photomagnétoélectrique de Ge excité par une lumière polariséeZYKOV, V.G; SERDEGA, B.K.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1119-1120, issn 0015-3222Article

Hot-electron noise in two-valley semiconductors: an analytic modelSTANTON, C. J; WILKINS, J. W.Physical review. B, Condensed matter. 1987, Vol 36, Num 3, pp 1686-1695, issn 0163-1829Article

Excited states and the metal-insulator transition in monovalent systemsBHATT, R. N; SACHDEV, S.Physical review. B, Condensed matter. 1986, Vol 34, Num 5, pp 3520-3523, issn 0163-1829Article

Influence of donor-pairs on density of states of degenerate N-type semiconductorsDE BRITO MOTA, F; FERREIRA DA SILVA, A.Solid state communications. 1990, Vol 73, Num 4, pp 313-315, issn 0038-1098Article

On level splitting by intervalley interference effects in semiconductor quantum wellsIKONICÊ, Z; INKSON, J. C; SRIVASTAVA, G. P et al.Solid state communications. 1990, Vol 76, Num 2, pp 117-119, issn 0038-1098, 3 p.Article

Temperature dependence of the high-field electron transport characteristics in n-GaAs emittersGHERM, V; SEMYKINA, E; ROZE, K et al.Semiconductor science and technology. 1996, Vol 11, Num 6, pp 883-889, issn 0268-1242Article

Enhancement of conductance fluctuations in two-dimensional mesoscopic electron systems with valley structuresIWABUCHI, S.Zeitschrift für Physik. B, Condensed matter. 1995, Vol 98, Num 2, pp 223-229, issn 0722-3277Article

Correct and rigorous single-electron-gas hydrodynamic transport model for multi-valley semiconductorsJYEGAL, J; DEMASSA, T. A.Solid-state electronics. 1994, Vol 37, Num 9, pp 1603-1609, issn 0038-1101Article

Electron energy distributions, transport parameters, and rate coefficients in GaAsCHENG, M; KUNHARDT, E. E.Journal of applied physics. 1988, Vol 63, Num 7, pp 2322-2330, issn 0021-8979Article

Effet dimensionnel sur les longueurs cinétiques dans la magnétorésistance des semiconducteurs à plusieurs valléesMOZDOR, E. V; PRIMA, N. A.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 7, pp 1291-1296, issn 0015-3222Article

Décomposition à plusieurs vallées du spectre de l'exciton direct dans GeZUBKOVA, S. M; RUSINA, L. N; TOLPYGO, K. B et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 8, pp 1429-1433, issn 0015-3222Article